A perspective view of silicon based classical to non-classical mos transistors and their extension in machine learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
Impact of process variation on nanosheet gate-all-around complementary FET (CFET)
X Yang, X Li, Z Liu, Y Sun, Y Liu, X Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, dc characteristic variations of nanosheet (NS) gate-all-around (GAA)
complementary FET (CFET) induced by process fluctuations are investigated for the first …
complementary FET (CFET) induced by process fluctuations are investigated for the first …
Impact of fin line edge roughness and metal gate granularity on variability of 10-nm node SOI n-FinFET
We report the numerical simulation study on the characteristic variability of 10-nm SOI Multi
Fin n-FET due to the impact of random fluctuation sources such as gate work function …
Fin n-FET due to the impact of random fluctuation sources such as gate work function …
Study of Work-Function Variation in High- /Metal-Gate Gate-All-Around Nanowire MOSFET
In this paper, threshold-voltage (V TH) variation caused by work-function variation (WFV) in
a high-κ/metalgate gate-all-around (GAA) nanowire MOSFET is quantitatively estimated …
a high-κ/metalgate gate-all-around (GAA) nanowire MOSFET is quantitatively estimated …
Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors
Using physics-based predictive technology CAD simulations, we show the improvements
possible in device performance via strain engineering in vertically-stacked horizontal gate …
possible in device performance via strain engineering in vertically-stacked horizontal gate …
Performance analysis of ferroelectric gaa mosfet with metal grain work function variability
This work represents a unique GAA MOSFET with metal work-function variations (WFVs)
and ferroelectric material as dielectric. A random distribution of metal grain (TiN) with grain …
and ferroelectric material as dielectric. A random distribution of metal grain (TiN) with grain …
Metal grain granularity study on a gate-all-around nanowire FET
The impact of the metal grain granularity (MGG) variations on subthreshold and ON-current
of a 22-nm gate length Si gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) …
of a 22-nm gate length Si gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) …
Variability effects in nanowire and macaroni MOSFETs—Part I: Random dopant fluctuations
AS Spinelli, CM Compagnoni… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article and the related Part II, we investigate variability effects on the threshold voltage
of nanowire and Macaroni MOSFETs, focusing on random dopant fluctuations (RDFs) and …
of nanowire and Macaroni MOSFETs, focusing on random dopant fluctuations (RDFs) and …
Superior work function variability performance of horizontally stacked nanosheet FETs for sub-7-nm technology and beyond
In this paper, work function variability (WFV) of stacked nanosheet FET (NSHFET) has been
numerically investigated using 3-D quantum corrected Drift-Diffusion simulation framework …
numerically investigated using 3-D quantum corrected Drift-Diffusion simulation framework …
Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- /Metal-Gate Work-Function Variation
The 3-D technology computer-aided design simulations were performed with four metal-gate
materials (ie, titanium nitride, tungsten nitride, tantalum nitride, and molybdenum nitride) to …
materials (ie, titanium nitride, tungsten nitride, tantalum nitride, and molybdenum nitride) to …