Commercial infrared (IR) photodetectors based on epitaxial growth inorganic
semiconductors, eg InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility …

New emerging low‐dimensional such as 0D, 1D, and 2D nanomaterials have attracted
tremendous research interests in various fields of state‐of‐the‐art electronics …

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-
level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) …

Photodetectors that are sensitive in the shortwave-infrared (SWIR) range (1–2 µm) are of
great interest for applications such as machine vision, autonomous driving and three …

Abstract Antimony selenide (Sb2Se3) is a promising candidate for photodetector
applications boasting unique material benefits and remarkable optoelectronic properties …

Abstract Kesterite Cu2ZnSn (S, Se) 4 (CZTSSe) is a promising candidate for photodetector
(PD) applications thanks to its excellent optoelectronic properties. In this work, a green …

Combining information from multispectral images into a fused image is informative and
beneficial for human or machine perception. Currently, multiple photodetectors with different …

Colloidal quantum dots (CQDs) are of interest for optoelectronic devices because of the
possibility of high-throughput solution processing and the wide energy gap tunability from …

Photodetection over a broad spectral range is necessary for multispectral sensing and
imaging. Despite the fact that broadband single-element detectors with high performance …

Image sensors made using silicon complementary metal–oxide–semiconductor technology
can be found in numerous electronic devices and typically rely on pinned photodiode …