Abstract 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition‐
metal dichalcogenides (TMDs), are intrinsically flexible, can withstand very large strains (> …

Silicon carbide, as a third-generation semiconductor material, plays a pivotal role in various
advanced technological applications. Its exceptional stability under extreme conditions has …

In this study, the Saint-Venant torsion problem based on strain gradient theory is developed.
A total form of Mindlin's strain gradient theory is used to acquire a general Saint-Venant …

Research in boron nitride nanosheets (BNNS) has evoked significant interest in the field of
nano-electronics, nanoelectromechanical (NEMS) devices, and nanocomposites due to its …

Two-dimensional materials (2Dm) offer a unique insight into the world of quantum
mechanics including van der Waals (vdWs) interactions, exciton dynamics and various other …

Hexagonal 4H-silicon carbide (4H-SiC) is a transversely isotropic substrate garnering
interest for precision MEMS devices such as resonant gyroscopes. This paper investigates …

Integrated photonics is poised to become a mainstream solution for high-speed data
communications and sensing in harsh radiation environments, such as outer space, high …

Circular microdisk mechanical resonators vibrating in their various resonance modes have
emerged as important platforms for a wide spectrum of technologies including photonics …

This article investigates and assesses neutron radiation effects on attitude estimation (AE)
processing, typically embedded in inertial navigation systems (INSs) and upcoming …

Gallium nitride (GaN) has attracted great attention as a structural material for advanced
microelectromechanical systems (MEMS), thanks to its excellent ensemble of electrical and …