Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …

The use of organic, oxide and low-dimensional materials in field-effect transistors has now
been studied for decades. However, properly reporting and comparing device performance …

Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …

Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …

Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

Down‐scaling of transistor size in the lateral dimensions must be accompanied by a
corresponding reduction in the channel thickness to ensure sufficient gate control to turn off …

In this article, we adopt a radical approach for next generation ultra-low-power sensor
design by embracing the evolutionary success of animals with extraordinary sensory …

A defect-controlled approach for the nucleation and epitaxial growth of WSe2 on hBN is
demonstrated. The WSe2 domains exhibit a preferred orientation of over 95%, leading to a …