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Demonstration of a nanosheet FET with high thermal conductivity material as buried oxide: Mitigation of self-heating effect
Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
A perspective view of silicon based classical to non-classical mos transistors and their extension in machine learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
Common source amplifier and ring oscillator circuit performance optimization using multi-bridge channel FETs
In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is
performed. To enhance power performance co-optimization geometry parameters like NS …
performed. To enhance power performance co-optimization geometry parameters like NS …
A comprehensive analysis of nanosheet FET and its CMOS circuit applications at elevated temperatures
NA Kumari, P Prithvi - Silicon, 2023 - Springer
Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
Unveiling the self-heating and process variation reliability of a junctionless FinFET-based hydrogen gas sensor
Field-effect-transistor-based sensors are essential for environmental monitoring, industrial
analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …
analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …
A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor
This work demonstrates the reliability-aware analysis of the Junctionless negative
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
capacitance (NC) FinFET employed as a hydrogen (H 2) gas sensor. Gate stacking of the …
Self-heating and interface traps assisted early aging revelation and reliability analysis of negative capacitance FinFET
The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several
realistic aspects of transport physics, remains challenging. In this paper, we investigated the …
realistic aspects of transport physics, remains challenging. In this paper, we investigated the …
Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants
The CMOS compatibility of Negative Capacitance (NC) FETs has been enhanced
tremendously after introducing a thin film-doped HfO 2 as a ferroelectric (FE) layer. For a …
tremendously after introducing a thin film-doped HfO 2 as a ferroelectric (FE) layer. For a …
Analog/RF and linearity performance assessment of a negative capacitance FinFET using high threshold voltage techniques
The continued exploration of the ferroelectric-based negative capacitance field effect
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …
transistor (NCFET) for energy-efficient and higher current drivability merits has called for an …
Self-heating aware threshold voltage modulation conforming to process and ambient temperature variation for reliable nanosheet FET
Internal and external process variations severely affect the device threshold voltage (V_th)
and, in turn, the device's reliability. For the first time, this paper presented a thorough …
and, in turn, the device's reliability. For the first time, this paper presented a thorough …