Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN
high electron mobility transistor on GaN substrate was investigated and compared with …
high electron mobility transistor on GaN substrate was investigated and compared with …
Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures
X Kong, K Wei, G Liu, X Liu - Journal of Physics D: Applied …, 2012 - iopscience.iop.org
Abstract In this work, Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures with different
Ti/Al relative thicknesses were fabricated and characterized. A contact with Ti/Al relative …
Ti/Al relative thicknesses were fabricated and characterized. A contact with Ti/Al relative …
[HTML][HTML] Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy
Z Zhang, Z Xu, Y Song, T Liu, B Dong, J Liu… - Nanotechnology and …, 2021 - pubs.aip.org
As an important wide-bandgap semiconductor, gallium nitride (GaN) has attracted
considerable attention. This paper describes the use of confocal Raman spectroscopy to …
considerable attention. This paper describes the use of confocal Raman spectroscopy to …
Functionalization of 2D macroporous silicon under the high-pressure oxidation
Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures
is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO 2 phase on …
is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO 2 phase on …
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
We present a comparative study of the strain relaxation of GaN/AlN short-period
superlattices (SLs) grown on two different III-nitride substrates introducing different amounts …
superlattices (SLs) grown on two different III-nitride substrates introducing different amounts …
High-resolution X-ray diffraction analysis of AlxGa1− xN/InxGa1− xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
The work presents a comparative study on the effects of In incorporation in the channel layer
of AlGaN/GaN type-II heterostructures grown on c-plane sapphire by Plasma Assisted …
of AlGaN/GaN type-II heterostructures grown on c-plane sapphire by Plasma Assisted …
X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates
Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer
layers and different substrates are presented in this work. Justification of dislocation …
layers and different substrates are presented in this work. Justification of dislocation …
Light-emitting diode quality investigation via low-frequency noise characteristics
V Palenskis, J Matukas, S Pralgauskaitė - Solid-State Electronics, 2010 - Elsevier
There are presented a comprehensive investigation of noise characteristics (the fluctuations
spectra of both the emitted light power and the voltage of light-emitting diodes (LEDs) at …
spectra of both the emitted light power and the voltage of light-emitting diodes (LEDs) at …
[HTML][HTML] Optical and structural study of deformation states in the GaN/AlN superlattices
We report on the effect of strain on the optical and structural properties of 5-, 10-, and 20-
period GaN/AlN superlattices (SLs) deposited by plasma-assisted molecular beam epitaxy …
period GaN/AlN superlattices (SLs) deposited by plasma-assisted molecular beam epitaxy …
Effect of strain relaxation and the Burstein–Moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process
For the first time, high optical quality InN films were grown on a sapphire substrate using the
atmospheric chemical vapour deposition technique in the temperature range of 560–650° C …
atmospheric chemical vapour deposition technique in the temperature range of 560–650° C …