Characterisation of amorphous molybdenum silicide (MoSi) superconducting thin films and nanowires

A Banerjee, LJ Baker, A Doye, M Nord… - Superconductor …, 2017 - iopscience.iop.org
We report on the optimisation of amorphous molybdenum silicide thin film growth for
superconducting nanowire single-photon detector (SNSPD) applications. Molybdenum …

Materials and surface aspects in the development of SRF Niobium cavities

C Antoine - 2012 - cds.cern.ch
Foreword from author; When I joined the CEA Saclay SRF group in 1989, my initial
background was physical chemistry and surface science, which I completed later on with …

Anion Photoelectron Spectroscopy and Theoretical Investigation on Nb2Sin/0 (n = 2–12) Clusters

SJ Lu, HG Xu, XL Xu, WJ Zheng - The Journal of Physical …, 2017 - ACS Publications
We measured the photoelectron spectra of Nb2Si n–(n= 2–12) anions and investigated the
geometric structures and electronic properties of Nb2Si n–anions and their neutral …

The structural and electronic properties of NbSi n−/0 (n= 3–12) clusters: anion photoelectron spectroscopy and ab initio calculations

SJ Lu, GJ Cao, XL Xu, HG Xu, WJ Zheng - Nanoscale, 2016 - pubs.rsc.org
Niobium-doped silicon clusters, NbSin−(n= 3–12), were generated by laser vaporization and
investigated by anion photoelectron spectroscopy. The structures and electronic properties …

Atomic layer deposition of amorphous niobium carbide-based thin film superconductors

JA Klug, T Proslier, JW Elam, RE Cook… - The Journal of …, 2011 - ACS Publications
Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using
trimethylaluminum (TMA), NbF5, and NbCl5 precursors. In situ quartz crystal microbalance …

Atomic layer deposition of CoF 2, NiF 2 and HoF 3 thin films

E Atosuo, M Mäntymäki, L Pesonen, K Mizohata… - Dalton …, 2023 - pubs.rsc.org
The present study describes atomic layer deposition (ALD) processes and characterization
of CoF2, NiF2, and HoF3 thin films. For CoF2 deposition CoCl2 (TMEDA)(TMEDA= N, N …

Selective atomic layer deposition of MoSix on Si (0 0 1) in preference to silicon nitride and silicon oxide

JY Choi, CF Ahles, R Hung, N Kim, AC Kummel - Applied Surface Science, 2018 - Elsevier
Highly selective deposition of MoSi x on Si in preference to SiO 2 and SiN x was achieved
via atomic layer deposition (ALD) using MoF 6 and Si 2 H 6 at 120° C. The selectivity was …

Low temperature atomic layer deposition of highly photoactive hematite using iron (III) chloride and water

JA Klug, NG Becker, SC Riha, ABF Martinson… - Journal of Materials …, 2013 - pubs.rsc.org
Nanostructured hematite (α-Fe2O3) has been widely studied for use in a variety of thin film
applications including solar energy conversion, water oxidation, catalysis, lithium-ion …

Stability, metallicity, and magnetism in niobium silicide nanofilms

X Lu, DP Goronzy, CG Torres-Castanedo… - Physical Review …, 2022 - APS
Modern superconducting qubits based on two-dimensional (2D) transmons typically involve
the growth of Nb thin films on high-resistivity Si substrates. Since imperfections at the Nb-Si …

Nucleation and growth process of atomic layer deposition platinum nanoparticles on strontium titanate nanocuboids

C Wang, L Hu, K Poeppelmeier, PC Stair… - Nanotechnology, 2017 - iopscience.iop.org
Uniform, well-dispersed platinum nanoparticles were grown on SrTiO 3 nanocuboids via
atomic layer deposition (ALD) using (methylcyclopentadienyl) trimethylplatinum (MeCpPt …