High-κ dielectrics and advanced channel concepts for Si MOSFET
M Wu, YI Alivov, H Morkoç - Journal of Materials Science: Materials in …, 2008 - Springer
With scaling of the gate length downward to increase speed and density, the gate dielectric
thickness must also be reduced. However, this practice which has been in effect for many …
thickness must also be reduced. However, this practice which has been in effect for many …
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
The current-voltage (IV) characteristics of Al/TiO 2/p-Si metal-insulator-semiconductor (MIS)
structures have been investigated in the temperature range of 80–300 K. An abnormal …
structures have been investigated in the temperature range of 80–300 K. An abnormal …
On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes
The energy distribution profile of the interface states (Nss) and their relaxation time (τ) and
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …
Capacitance–frequency (C–f) and conductance–frequency (G–f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature
We report on the capacitance–frequency (C–f) and conductance–frequency (G–f)
characteristics of Ir/n-InGaN Schottky diode with various biases and at different temperature …
characteristics of Ir/n-InGaN Schottky diode with various biases and at different temperature …
Fabrication and electrical characterization of CdO/p-Si photosensors
RH Al Orainy, AA Hendi - Microelectronic engineering, 2014 - Elsevier
CdO nanorods were grown by sol–gel technique and the structural properties were
analyzed by X-ray diffraction and AFM measurements. CdO films were grown onto p-type …
analyzed by X-ray diffraction and AFM measurements. CdO films were grown onto p-type …
Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon
For silicon surface passivation, we investigate stack layers consisting of a thin Al 2 O 3 layer
and a TiO 2 cap** layer deposited by means of thermal atomic layer deposition (ALD). In …
and a TiO 2 cap** layer deposited by means of thermal atomic layer deposition (ALD). In …
Naphthalene derivatized TiO2–carbon hybrid materials for efficient photocatalytic splitting of water
We report a facile approach for the synthesis of TiO2–Carbon (C) hybrid formed by a ligand-
to-metal charge transfer (LMCT) complexation between a small organic molecule precursor …
to-metal charge transfer (LMCT) complexation between a small organic molecule precursor …
The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol–gel method
In this study, the forward bias current–voltage (I–V) and capacitance–voltage (C–V)
characteristics of the Al/TiO 2/p-Si (MIS) structures derived using the sol–gel method have …
characteristics of the Al/TiO 2/p-Si (MIS) structures derived using the sol–gel method have …
Effect of temperature on the capacitance–frequency and conductance–voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies
A polyaniline/p-Si/Al MIS device has been fabricated by forming a polyaniline layer on Si by
using the electrochemical polymerization method. The conductance–voltage and …
using the electrochemical polymerization method. The conductance–voltage and …
On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures
The energy distribution profile of the interface states (Nss) of Al/TiO2/p–Si (MIS) structures
prepared using the sol–gel method was obtained from the forward bias current–voltage (I–V) …
prepared using the sol–gel method was obtained from the forward bias current–voltage (I–V) …