Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …
in a fully controllable way and is thus of great interest in both basic science and device …
Rational design of nanowire solar cells: from single nanowire to nanowire arrays
In this review, we report several rational designs of nanowire-based solar cells from single
nanowire to nanowire arrays. Two methods of nanowires fabrication: via'top …
nanowire to nanowire arrays. Two methods of nanowires fabrication: via'top …
III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities
Abstract Nanowire (NW)-based photodetectors (PDs) have gained considerable attention
both scientifically and technologically over the past few decades due to their potential in …
both scientifically and technologically over the past few decades due to their potential in …
Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices
M Zendrini, V Dubrovskii, A Rudra… - ACS Applied Nano …, 2024 - ACS Publications
The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …
InGaAs–GaAs nanowire avalanche photodiodes toward single-photon detection in free-running mode
Single-photon detection at near-infrared (NIR) wavelengths is critical for light detection and
ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle …
ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle …
A Review Chemical Vapor Deposition: Process And Application
AA Dinata, AM Rosyadi, S Hamid, R Zainul - 2018 - osf.io
Abstract Chemical Vapor Deposition merupakan metode deposisi yang digunakan untuk
menghasilkan bahan padat berkualitas tinggi dan berkinerja tinggi yang biasanya dibawah …
menghasilkan bahan padat berkualitas tinggi dan berkinerja tinggi yang biasanya dibawah …
[HTML][HTML] Role of twin defects on growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy
We report the effects of Si do** on the growth dynamics and size distribution of entirely
catalyst-free GaAs nanowire (NW) arrays grown by selective area molecular beam epitaxy …
catalyst-free GaAs nanowire (NW) arrays grown by selective area molecular beam epitaxy …
Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms
Integration of ultracompact light sources on silicon platforms is regarded as a crucial
requirement for various nanophotonic applications. In this work, InGaAs/InP core/shell …
requirement for various nanophotonic applications. In this work, InGaAs/InP core/shell …
Importance of As and Ga balance in achieving long GaAs nanowires by selective area epitaxy
We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free
vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs (111) B substrates …
vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs (111) B substrates …
Modeling catalyst-free growth of III-V nanowires: Empirical and rigorous approaches
VG Dubrovskii - Nanomaterials, 2023 - mdpi.com
Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation
mechanism or selective area growth (SAG) on different substrates, including Si, show great …
mechanism or selective area growth (SAG) on different substrates, including Si, show great …