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Variability in resistive memories
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
In-memory computing with resistive switching devices
Modern computers are based on the von Neumann architecture in which computation and
storage are physically separated: data are fetched from the memory unit, shuttled to the …
storage are physically separated: data are fetched from the memory unit, shuttled to the …
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …
scalable memory technologies are being researched for data storage and data-driven …
Device and circuit architectures for in‐memory computing
With the rise in artificial intelligence (AI), computing systems are facing new challenges
related to the large amount of data and the increasing burden of communication between …
related to the large amount of data and the increasing burden of communication between …
HfO2-based resistive switching memory devices for neuromorphic computing
HfO 2-based resistive switching memory (RRAM) combines several outstanding properties,
such as high scalability, fast switching speed, low power, compatibility with complementary …
such as high scalability, fast switching speed, low power, compatibility with complementary …
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …
Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM
Resistive switching memory (RRAM) has been proposed as an artificial synapse in
neuromorphic circuits due to its tunable resistance, low power operation, and scalability. For …
neuromorphic circuits due to its tunable resistance, low power operation, and scalability. For …
[HTML][HTML] A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …
insufficient owing to its high latency and energy consumption that originate from its …
Confining cation injection to enhance CBRAM performance by nanopore graphene layer
Conductive‐bridge random access memory (CBRAM) is considered a strong contender of
the next‐generation nonvolatile memory technology. Resistive switching (RS) behavior in …
the next‐generation nonvolatile memory technology. Resistive switching (RS) behavior in …