We review epitaxial formation, basic properties, and device applications of a novel type of
nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots …

We demonstrate the continuous and reversible tuning of the optical band gap of suspended
monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains …

This chapter reviews the principles of bandgap engineering and quantum confinement in
semiconductors, with a particular emphasis on the optoelectronic properties of quantum …

The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

The experimental evidence for the Hall–Petch dependence of strength on the inverse
square-root of grain size is reviewed critically. Both the classic data and more recent results …

GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …

The adoption of new thin-film materials in high-end technologies, such as monolithic tandem
solar cells and integrated circuits, demands fabrication processes that allow a high level of …

Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach,
which is technologically important in optical fiber communication systems, still remain …

The precise measurement of mechanical stress at the nanoscale is of fundamental and
technological importance. In principle, all six independent variables of the stress tensor …

In this paper, we employed numerical modeling to investigate the influence of crucial
parameters, namely electric field, confinement parabolicity, compositions, and structure …