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[HTML][HTML] Atmosphere engineering of metal-free Te/C3N4 pn heterojunction for nearly 100% photocatalytic converting CO2 to CO
H Liao, K Huang, W Hou, H Guo, C Lian… - Advanced Powder …, 2024 - Elsevier
Carbon nitride (CN)-based heterojunction photocatalysts hold promise for efficient carbon
dioxide (CO 2) reduction. However, suboptimal production yields and limited selectivity in …
dioxide (CO 2) reduction. However, suboptimal production yields and limited selectivity in …
Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials
The reversible phase transitions in phase-change memory devices can switch on the order
of nanoseconds, suggesting a close structural resemblance between the amorphous and …
of nanoseconds, suggesting a close structural resemblance between the amorphous and …
Phase-change memory from molecular tellurides
Phase-change memory (PCM) is an emerging memory technology based on the resistance
contrast between the crystalline and amorphous states of a material. Further development …
contrast between the crystalline and amorphous states of a material. Further development …
Structural Ordering in Ultrasmall Multicomponent Chalcogenides: The Case of Quaternary Cu‐Zn‐In‐Se Nanocrystals
The compositional tunability of non‐isovalent multicomponent chalcogenide thin films and
the extent of atomic ordering of their crystal structure is key to the performance of many …
the extent of atomic ordering of their crystal structure is key to the performance of many …
Concepts behind the Redox Photocatalysis with Quantum Dots
In this conceptual review, we present the optical and electronic characteristics of quantum
dots for the designing of organic synthesis experiments through the photocatalysis. We …
dots for the designing of organic synthesis experiments through the photocatalysis. We …
On the Application Potential of Chemically Tailored Metal Oxide and Higher Chalcogenide Nanoparticles for Nanoscale Resistive Switching Devices
A Frommelius, T Ohlerth, M Noyong… - physica status solidi …, 2024 - Wiley Online Library
Resistive switching (RS) for nonvolatile data storage is a highly relevant field of research. Up
to now, RS devices are fabricated via semiconductor processing technologies. This poses …
to now, RS devices are fabricated via semiconductor processing technologies. This poses …
Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu–Ge–Te Nanoparticles
Phase-change memory (PCM) technology has recently attracted a vivid interest for
neuromorphic applications, in-memory computing, and photonic integration due to the …
neuromorphic applications, in-memory computing, and photonic integration due to the …
Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications
This study investigates the structural, morphological, and electrical properties of silicon (Si)
and germanium (Ge) quantum dots (QDs) embedded within thin SiO₂ layers in Metal …
and germanium (Ge) quantum dots (QDs) embedded within thin SiO₂ layers in Metal …
Optical properties of MnTe2 few-layer quantum dots
Quantum dots (QDs) are gaining attention as a possible emissive material that might be
used in flexible optoelectronic and photonic systems. In the present work, the temperature …
used in flexible optoelectronic and photonic systems. In the present work, the temperature …
Inkjet‐Printed Phase Change Memory Devices
Phase change memory (PCM) is among the most promising candidates for the next
generation of storage‐class and main memory systems in the computing era beyond …
generation of storage‐class and main memory systems in the computing era beyond …