Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …

Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …

The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …

With the implementation of the Minamata Convention on Mercury, there is an urgent need to
find a new way to generate ultraviolet‐C (UVC) light to replace mercury lamp. Upconversion …

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) have been identified as a
prospective mercury-free UV source. However, the observation of severe electron overflow …

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor
quantum efficiency and low optical power. Herein, we propose a 273-nm DUV LED …

Abstract Commonly, the Al-rich AlGaN layer acts as electron blocking layer (EBL) to block
the overflow of electrons from the active region in conventional AlGaN deep-ultraviolet …