AlGaN photonics: recent advances in materials and ultraviolet devices

D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Recent advances in application of UV light-emitting diodes for degrading organic pollutants in water through advanced oxidation processes: A review

G Matafonova, V Batoev - Water research, 2018 - Elsevier
Over the last decade, ultraviolet light-emitting diodes (UV LEDs) have attracted considerable
attention as alternative mercury-free UV sources for water treatment purposes. This review is …

LED revolution: fundamentals and prospects for UV disinfection applications

J Chen, S Loeb, JH Kim - Environmental Science: Water Research & …, 2017 - pubs.rsc.org
The UV-light emitting diode (LED) has been attracting significant attention as a new UV
source that can replace conventional mercury gas-filled lamps in water disinfection …

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

H Hirayama, N Maeda, S Fujikawa… - Japanese Journal of …, 2014 - iopscience.iop.org
In this paper, recent advances in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes
(LEDs) are demonstrated. 220–350-nm-band DUV LEDs have been realized by develo** …

Advances in group III-nitride-based deep UV light-emitting diode technology

M Kneissl, T Kolbe, C Chua, V Kueller… - Semiconductor …, 2010 - iopscience.iop.org
The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary
of the state-of-the-art in device performance and enumeration of applications. Performance …

Ultraviolet light-emitting diodes based on group three nitrides

A Khan, K Balakrishnan, T Katona - Nature photonics, 2008 - nature.com
Light-emitting diodes with emission wavelengths less than 400 nm have been developed
using the AlInGaN material system. For devices operating at shorter wavelengths, alloy …

Bright future of deep-ultraviolet photonics: Emerging UVC chip-scale light-source technology platforms, benchmarking, challenges, and outlook for UV disinfection

VK Sharma, HV Demir - Acs Photonics, 2022 - ACS Publications
The COVID-19 pandemic has generated great interest in ultraviolet (UV) disinfection,
particularly for air disinfection. Although UV disinfection was discovered close to 90 years …

III–nitride UV devices

MA Khan, M Shatalov, HP Maruska… - Japanese journal of …, 2005 - iopscience.iop.org
The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …

231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

H Hirayama, T Yatabe, N Noguchi, T Ohashi… - Applied Physics …, 2007 - pubs.aip.org
The authors demonstrated AlGaN multiquantum-well (MQW) deep-ultraviolet light-emitting
diodes (LEDs) with wavelengths in the range of 231–261 nm⁠, fabricated on low threading …

Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

H Hirayama - Journal of Applied Physics, 2005 - pubs.aip.org
In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …