A review of techniques for ageing detection and monitoring on embedded systems
Embedded digital devices are progressively deployed in dependable or safety-critical
systems. These devices undergo significant hardware ageing, particularly in harsh …
systems. These devices undergo significant hardware ageing, particularly in harsh …
Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In2O3 Transistors by Reliability Characterization
Ultrathin In2O3 and other recently explored low-thermal-budget ultrathin oxide
semiconductors have shown great promise for back-end-of-line (BEOL)-compatible logic …
semiconductors have shown great promise for back-end-of-line (BEOL)-compatible logic …
A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact
The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, part-I: DC stress and recovery
An ultrafast (10-μs delay) measurement technique is used to characterize the negative bias
temperature instability-induced threshold voltage shift (ΔV T) in replacement metal gate …
temperature instability-induced threshold voltage shift (ΔV T) in replacement metal gate …
Modeling of NBTS effects in p-channel power VDMOSFETs
D Danković, N Mitrović, Z Prijić… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This paper studies negative bias temperature instability in commercial IRF9520 p-channel
power VDMOSFETs under both static and pulsed bias stress conditions in order to model …
power VDMOSFETs under both static and pulsed bias stress conditions in order to model …
Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
Online NBTI-induced partially depleted (PD) SOI degradation and recovery prediction utilizing long short-term memory (LSTM)
R Bu, Z Ren, H Ge, J Chen - Microelectronics Reliability, 2023 - Elsevier
Negative bias temperature instability (NBTI) is one of the major aging effects that account for
degradation or even failure of SOI pMOSFETs. However, several modeling methods for …
degradation or even failure of SOI pMOSFETs. However, several modeling methods for …
Recovery investigation of NBTI-induced traps in n-MOSFET devices
Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-
type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to …
type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to …
NBTI mitigation by optimized HKMG thermal processing in a FinFET technology
B Ye, Y Gu, H Xu, C Tang, H Zhu… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
It has become more challenging to suppress the negative bias temperature instability (NBTI)
in advanced FinFET technology which is largely originated from the dielectric/channel …
in advanced FinFET technology which is largely originated from the dielectric/channel …