The growing demand for low-power static random access memory (SRAM) cells in Internet
of Things (IoT) devices has led to the development of various SRAM cell topologies that …

This article explains about the design of a new low power 11T SRAM cell. In this proposed
method, two voltage sources are used, one is connected to the bit line and the other is …

Ultralow-power dissipation can be achieved by operating digital circuits with scaled supply
voltages, albeit with degradation in speed and increased susceptibility to parameter …

This paper focuses on the design of a novel low power twelve transistor static random
access memory (12T SRAM) cell. In the proposed structure two voltage sources are used …

Many image/video processing algorithms require FIFO for filtering. The FIFO size is
proportional to the length of the filters and input data width, causing large area and power …

In this paper the analysis of DRAM logic compatible 3T cell has been shown. Due to its high
density and low cost of memory, it is universally used by the advanced processor for on chip …

Static Random Access Memory (SRAM) plays a most substantial role in the microprocessor
world, but as the technology is scaling down in nanometers, leakage parameters and delay …

This work aims to improve the total power dissipation, leakage currents and stability without
disturbing the logic state of SRAM cell with concept called sub-threshold operation. Though …

This paper presents analysis of the STATIC NOISE MARGIN (SNM), power dissipation,
ACCESS TIME and dynamic noise margin of a novel low power proposed 8T Static Random …

A Schmitt Trigger based SRAM 12T bit-cell is proposed to operate under optimum-energy
supply voltage for medical device application. Therefore, the design of medical device has …