We report on the fabrication of rectifying junctions between n-type ZnO nanorods (NRs) and
p-type polymer (poly (3, 4ethylenedioxythiophene): poly (styrenesulfonate)(PEDOT: PSS) …

Highly rectifying graphite/β-Ga 2 O 3 Schottky junctions have been prepared by a simple low-
cost drop-casting process. The influence of two different crystal orientations on the current …

Abstract Poly (1, 4-phenylenevinylene) derivative (PPV-C 6) based solution was spin-coated
onto hydrothermally grown and vertically aligned ZnO nanorods (ZnO NRs). The …

In this study, synthesis of monodisperse NiPt alloy NPs, preparation of rGO, decoration of the
NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were …

The influence of polar and nonpolar crystallographic orientations of ZnO substrates on the
current transport mechanism in poly (3, 4‐ethylenedioxythiophene) poly (4 …

In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on
current-voltage (IV) measurement in the temperature range (300 K-425 K). Electrical …

设计并制备了基于石墨烯/n 型硅肖特基结的光电探测器, 并从能带角度研究和分析了其IV 及CV
特性. 结果表明, 石墨烯/氮化硅/硅(金属-绝缘层-半导体) 电容器对器件的IV 及CV …