Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
K Nishiguchi, S Kaneki, S Ozaki… - Japanese Journal of …, 2017 - iopscience.iop.org
To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS)
AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and …
AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and …