The rise of semi-metal electronics

E Zhai, T Liang, R Liu, M Cai, R Li, Q Shao… - Nature Reviews …, 2024‏ - nature.com
Semi-metals present unique transport properties due to their distinctive band structures and
topological properties, leading to an emergence of semi-metal-based electronic …

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

L Bainsla, B Zhao, N Behera, AM Hoque… - Nature …, 2024‏ - nature.com
The unique electronic properties of topological quantum materials, such as protected
surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current …

Robust Field‐Free Switching Using Large Unconventional Spin‐Orbit Torque in an All‐Van der Waals Heterostructure

Y Zhang, X Ren, R Liu, Z Chen, X Wu… - Advanced …, 2024‏ - Wiley Online Library
The emerging all‐van der Waals (vdW) magnetic heterostructure provides a new platform to
control the magnetization by the electric field beyond the traditional spintronics devices. One …

Recent progress in spin-orbit torque magnetic random-access memory

VD Nguyen, S Rao, K Wostyn, S Couet - npj Spintronics, 2024‏ - nature.com
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast
operation and high endurance but faces challenges such as low switching current, reliable …

Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature

SN Kajale, T Nguyen, NT Hung, M Li, D Sarkar - Science advances, 2024‏ - science.org
Two-dimensional van der Waals (vdW) magnetic materials hold promise for the
development of high-density, energy-efficient spintronic devices for memory and …

Spintronics with two-dimensional materials and van der Waals heterostructures

S Roche, B van Wees, K Garello, SO Valenzuela - 2D Materials, 2024‏ - iopscience.iop.org
We briefly summarize more than fifteen years of intense research in 2D materials (2DM)-
based spintronics, which has led to an in-depth understanding of fundamental spin transport …

Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal

D Li, XY Liu, ZC Pan, AQ Wang, J Zhang, P Yu… - Physical Review B, 2024‏ - APS
Current-induced out of plane magnetization has been utilized for field-free switching of
ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy …

Manipulation of perpendicular magnetization via magnon current with tilted polarization

D Zheng, Y Li, C Liu, J Lan, C **, Q Wang, L Zhang… - Matter, 2024‏ - cell.com
Field-free switching of perpendicular magnetization driven by magnons is a promising
technology that can significantly reduce energy dissipation and potential damage to …

Field‐Free Perpendicular Magnetic Memory Driven by Out‐of‐Plane Spin‐Orbit Torques

S Liang, A Chen, L Han, H Bai, C Chen… - Advanced Functional …, 2024‏ - Wiley Online Library
Magnetic memory based on spin‐orbit torque (SOT) is a promising candidate for the next‐
generation storage devices. Materials that generate out‐of‐plane spin polarization (σz) are …

Orbital anomalous Hall effect in the few-layer Weyl semimetal

AQ Wang, D Li, TY Zhao, XY Liu, J Zhang, X Liao… - Physical Review B, 2024‏ - APS
We report on the observation of the linear anomalous Hall effect (AHE) in the nonmagnetic
Weyl semimetal TaIrT e 4. This is achieved by applying a direct current I dc and an …