FINFETs with wrap-around silicide and method forming the same
KC Ching, CW Tsai, CW Liu, CH Wang… - US Patent …, 2017 - Google Patents
A device includes isolation regions extending into a semiconductor substrate, with a
substrate strip between opposite portions of the isolation regions having a first width. A …
substrate strip between opposite portions of the isolation regions having a first width. A …
Integrated circuit device and method of manufacturing the same
H Park, J Ku, M Kim, JW Lee, SK Han - US Patent 9,508,727, 2016 - Google Patents
(57) ABSTRACT A method includes providing a plurality of active regions on a substrate,
and at least a first device isolation layer between two of the plurality of active regions …
and at least a first device isolation layer between two of the plurality of active regions …
Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
RJ Koval - US Patent 9,666,449, 2017 - Google Patents
BACKGROUND Control gates may be found in integrated circuit compo nents, such as non-
volatile memory cells of flash memory devices and select transistors, such as field effect …
volatile memory cells of flash memory devices and select transistors, such as field effect …
FinFET device and method of fabricating same
CH Wang, KC Ching, GS Chang, Z Wu - US Patent 9,318,606, 2016 - Google Patents
The present disclosure provides a semiconductor device. The semiconductor device
includes a substrate having isolation regions, a gate region, source and drain regions …
includes a substrate having isolation regions, a gate region, source and drain regions …
FinFET device and method of fabricating same
An integrated circuit structure includes a semiconductor substrate, and isolation regions
extending into the semiconductor substrate, wherein the isolation regions have opposite …
extending into the semiconductor substrate, wherein the isolation regions have opposite …
Semiconductor device with isolated body portion
Semiconductor devices with isolated body portions are described. For example, a
semiconductor structure includes a semiconductor body disposed above a semiconductor …
semiconductor structure includes a semiconductor body disposed above a semiconductor …
Structure and method for FinFET device with buried sige oxide
The present disclosure provides a semiconductor device that includes a Substrate of a first
semiconductor material; a fin feature having a first portion, a second portion and a third …
semiconductor material; a fin feature having a first portion, a second portion and a third …
Nonplanar device and strain-generating channel dielectric
KC Ching, KH Fung, Z Wu - US Patent 9,306,067, 2016 - Google Patents
2014-08-28 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD …
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD …
FinFET with longitudinal stress in a channel
KK Chan, QC Ouyang, DG Park, X Wang - US Patent 7,872,303, 2011 - Google Patents
The present invention provides a fin field effect transistors (finFET) having longitudinal
stress, which may be advanta geously employed to enhance the device performance, and …
stress, which may be advanta geously employed to enhance the device performance, and …
Source/drain regions for fin field effect transistors and methods of forming same
KC Ching, CW Liu - US Patent 9,577,101, 2017 - Google Patents
(57) ABSTRACT A method for forming a semiconductor device includes forming a fin
extending upwards from a semiconductor Substrate and forming a sacrificial layer on …
extending upwards from a semiconductor Substrate and forming a sacrificial layer on …