Forthcoming low-energy consumption oxide electronics rely on the deterministic control of
ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the …

Strain engineering has emerged as a powerful tool to enhance the performance of known
functional materials. Here we demonstrate a general and practical method to obtain super …

Ferroelectric perovskite oxides are emerging as a promising photoactive layer for
photovoltaic applications because of their very high stability and their alternative …

The success of oxide electronics depends on the ability to design functional properties such
as ferroelectricity with atomic accuracy. However, despite tremendous advances in …

Due to the full compatibility with modern complementary-metal-oxidesemiconductor (CMOS)
technology and scalable capability, HfO 2-based ferroelectric films have been considered as …

In the quest for energy efficient and fast memory elements, optically controlled ferroelectric
memories are promising candidates. Here, we show that, by taking advantage of the imprint …

In order to bring the diverse functionalities of transition metal oxides into modern electronics,
it is imperative to integrate oxide films with controllable properties onto the silicon platform …

The excellent energy storage performances of dielectric materials, a high energy density
and efficiency, the stability in a wide range of temperature, frequency and cycling time, are …

Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale
though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under …

Ferroelectric BaTiO3 films with large polarization have been integrated with Si (001) by
pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate …