Semiconductor device with air-spacer
WY Lee, FC Yang, CT Lin, YM Chen - US Patent 10,522,642, 2019 - Google Patents
(57) ABSTRACT A method includes forming a gate structure on a substrate, forming a seal
spacer covering a sidewall of the gate structure, forming a sacrificial spacer covering a …
spacer covering a sidewall of the gate structure, forming a sacrificial spacer covering a …
Gate-all-around field effect transistors having end portions of nanosheet channel layers adjacent to source/drain regions being wider than the center portions
Disclosed are a gate-all-around field effect transistor (GAAFET) and method. The GAAFET
includes stacked nanosheets having end portions adjacent to source/drain regions and a …
includes stacked nanosheets having end portions adjacent to source/drain regions and a …
Formation of a partial air-gap spacer
A method is presented for reducing parasitic capacitance. The method includes forming
multi-layer spacers between source/drain regions, forming a dielectric liner over the multi …
multi-layer spacers between source/drain regions, forming a dielectric liner over the multi …
Air-gap spacers for field-effect transistors
Structures for air-gap spacers in a field-effect transistor and methods for forming air-gap
spacers in a field-effect tran sistor. A gate structure is formed on a top surface of a …
spacers in a field-effect tran sistor. A gate structure is formed on a top surface of a …
Nanosheet transistor with dual inner airgap spacers
(57) ABSTRACT A substrate structure includes a set of nanosheet layers stacked upon a
substrate. The substrate structure includes a p-channel region and an n-channel region. The …
substrate. The substrate structure includes a p-channel region and an n-channel region. The …
Insulating cap on contact structure and method for forming the same
KC Tsai, FH Su, KJ Yu, JH Chen - US Patent 10,825,721, 2020 - Google Patents
A semiconductor device structure is provided. The semiconductor device structure includes
a gate stack formed over a semiconductor substrate, a source/drain contact structure …
a gate stack formed over a semiconductor substrate, a source/drain contact structure …
Transistor with dual-gate spacer
ES Liu, J Park, CG Lee, CH Jan - US Patent 10,535,747, 2020 - Google Patents
Semiconductor devices are electronic components that exploit the electronic properties of
semiconductor materials, such as silicon (Si), germanium (Ge), and gallium arsenide …
semiconductor materials, such as silicon (Si), germanium (Ge), and gallium arsenide …
Gate-all-around field effect transistors with air-gap inner spacers and methods
Disclosed are structures including a gate-all-around field effect transistor (GAAFET) with air-
gap inner spacers. The GAAFET includes a stack of nanoshapes that extend laterally …
gap inner spacers. The GAAFET includes a stack of nanoshapes that extend laterally …
Gate and source/drain contact structures positioned above an active region of a transistor device
R **e, C Park, CM Prindle - US Patent 10,388,770, 2019 - Google Patents
One illustrative IC product disclosed herein includes a transistor device including a gate
structure positioned above an active region, first and second conductive source/drain …
structure positioned above an active region, first and second conductive source/drain …
Inverse T-shaped contact structures having air gap spacers
Embodiments of the present invention are directed to a method of fabricating air gap
spacers. A non-limiting example of the method of fabricating air gap spacers includes …
spacers. A non-limiting example of the method of fabricating air gap spacers includes …