β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
[HTML][HTML] β-Gallium oxide power electronics
[HTML][HTML] Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a
growth rate of∼ 1 µm/h with control of the silicon do** concentration from 5× 1016 to 1019 …
growth rate of∼ 1 µm/h with control of the silicon do** concentration from 5× 1016 to 1019 …
Controlled Si do** of β-Ga2O3 by molecular beam epitaxy
JP McCandless, V Protasenko, BW Morell… - Applied Physics …, 2022 - pubs.aip.org
We report controlled silicon do** of Ga 2 O 3 grown in plasma-assisted molecular beam
epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier …
epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier …
Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG
B Fu, G Jian, W Mu, Y Li, H Wang, Z Jia, Y Li… - Journal of Alloys and …, 2022 - Elsevier
Abstract The cylindrical Sn: β-Ga 2 O 3 crystal with high crystalline quality was successfully
designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped …
designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped …
Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector
C Wang, WH Fan, YC Zhang, PC Kang, WY Wu… - Ceramics …, 2023 - Elsevier
This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …