Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Two-dimensional (2D) materials have attracted increasing research interest because of the
abundant choice of materials with diverse and tunable electronic, optical, and chemical …

Abstract Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have
attracted tremendous interest for transistor applications. However, the fabrication of 2D …

Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as
promising candidates for next generation nanoelectronics. Because of their atomically-thin …

Conventional semiconductors such as silicon‐and indium gallium arsenide (InGaAs)‐based
photodetectors have encountered a bottleneck in modern electronics and photonics in terms …

The discovery of graphene one decade ago has triggered enormous interest in develo**
two-dimensional materials (2DMs)—that is 2D allotropes of various elements or compounds …

BACKGROUND Materials by design is an appealing idea that is very hard to realize in
practice. Combining the best of different ingredients in one ultimate material is a task for …

Two-dimensional layered materials (2DLMs) have been a central focus of materials
research since the discovery of graphene just over a decade ago. Each layer in 2DLMs …