Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm
Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
Optical gain characteristics of staggered InGaN quantum wells lasers
Staggered InGaN quantum wells (QWs) are analyzed as improved gain media for laser
diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6 …
diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6 …
InGaN/GaN Quantum Dot Red Laser
Lasers emitting in the 600 nm wavelength range have gained attention for a number of
important applications, including optical information processing, plastic fiber communication …
important applications, including optical information processing, plastic fiber communication …
A InGaN/GaN quantum dot green (λ= 524 nm) laser
The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser
heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular …
heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular …
[HTML][HTML] Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells
Type-II InGaN-ZnGeN 2 quantum wells (QWs) are studied as improved active regions for
light-emitting diodes emitting in the blue (λ∼ 485 nm) and green (λ∼ 530 nm) spectral …
light-emitting diodes emitting in the blue (λ∼ 485 nm) and green (λ∼ 530 nm) spectral …
Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
Double-metallic Au/Ag layers deposited on top of InGaN/GaN quantum wells (QWs) are
used to tune the Purcell peak enhancement of the radiative recombination rate for nitride …
used to tune the Purcell peak enhancement of the radiative recombination rate for nitride …