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Phase engineering of 2D materials
Polymorphic 2D materials allow structural and electronic phase engineering, which can be
used to realize energy-efficient, cost-effective, and scalable device applications. The phase …
used to realize energy-efficient, cost-effective, and scalable device applications. The phase …
Large-Area Epitaxial Growth of Transition Metal Dichalcogenides
Over the past decade, research on atomically thin two-dimensional (2D) transition metal
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …
Coherent phonon spectroscopy and interlayer modulation of charge density wave order in the kagome metal
The recent discovery of the AV 3 Sb 5 (A= K, Rb, Cs) material family offers an exciting
opportunity to investigate the interplay of correlations, topology, and superconductivity in …
opportunity to investigate the interplay of correlations, topology, and superconductivity in …
Charge-Density-Wave-Induced Bands Renormalization and Energy Gaps in a Kagome Superconductor
Recently discovered Z 2 topological kagome metals AV 3 Sb 5 (A= K, Rb, and Cs) exhibit
charge-density-wave (CDW) phases and novel superconducting paring states providing a …
charge-density-wave (CDW) phases and novel superconducting paring states providing a …
Evidence for topological defects in a photoinduced phase transition
Upon excitation with an intense laser pulse, a symmetry-broken ground state can undergo a
non-equilibrium phase transition through pathways different from those in thermal …
non-equilibrium phase transition through pathways different from those in thermal …
Direct visualization of a two-dimensional topological insulator in the single-layer
ZY Jia, YH Song, XB Li, K Ran, P Lu, HJ Zheng, XY Zhu… - Physical Review B, 2017 - APS
We have grown nearly freestanding single-layer 1 T′-WT e 2 on graphitized 6 H-SiC (0001)
by using molecular beam epitaxy (MBE), and characterized its electronic structure with …
by using molecular beam epitaxy (MBE), and characterized its electronic structure with …
Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures
Y Zhang, L Yin, J Chu, TA Shifa, J **a… - Advanced …, 2018 - Wiley Online Library
Abstract 2D metal‐semiconductor heterostructures based on transition metal
dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such …
dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such …
Charge density waves in two-dimensional transition metal dichalcogenides
Charge density wave (CDW is one of the most ubiquitous electronic orders in quantum
materials. While the essential ingredients of CDW order have been extensively studied, a …
materials. While the essential ingredients of CDW order have been extensively studied, a …
Direct visualization of stacking-selective self-intercalation in epitaxial Nb1+xSe2 films
Abstract Two-dimensional (2D) van der Waals (vdW) materials offer rich tuning opportunities
generated by different stacking configurations or by introducing intercalants into the vdW …
generated by different stacking configurations or by introducing intercalants into the vdW …
2D group IVB transition metal dichalcogenides
C Yan, C Gong, P Wangyang, J Chu… - Advanced Functional …, 2018 - Wiley Online Library
Semiconductor technology is currently impaired by the surface dangling bond of materials,
which introduces scattering and interface traps. 2D materials, especially transition metal …
which introduces scattering and interface traps. 2D materials, especially transition metal …