Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling
The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility
transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I GV …
transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I GV …
[HTML][HTML] The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges
It is only recently that the electric vehicle (EV) has evolved into a contemporary invention.
There has been a rapid acceleration in the development of EVs in a number of nations in …
There has been a rapid acceleration in the development of EVs in a number of nations in …
205-GHz (Al, In) N/GaN HEMTs
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a
short-circuit current gain cutoff frequency of fT= 205 GHz at room temperature, a new record …
short-circuit current gain cutoff frequency of fT= 205 GHz at room temperature, a new record …
High-Temperature Performance of AlGaN/GaN MOSHEMT With Gate Insulator Fabricated on Si (111) Substrate
F Husna, M Lachab, M Sultana… - … on Electron Devices, 2012 - ieeexplore.ieee.org
The dc operation of high-quality AlGaN/GaN metal–oxide–semiconductor high-electron-
mobility transistors (MOSHEMTs) on Si (111) substrates, fabricated using SiO_2 as the gate …
mobility transistors (MOSHEMTs) on Si (111) substrates, fabricated using SiO_2 as the gate …
Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Passivation
We studied submicrometer (LG= 0.15-0.25¿ m) gate-recessed InAlN/AlN/GaN high-electron
mobility transistors (HEMTs) on SiC substrates with 25-nm Al 2 O 3 passivation. The …
mobility transistors (HEMTs) on SiC substrates with 25-nm Al 2 O 3 passivation. The …
Gallium arsenide and gallium nitride semiconductors for power and optoelectronics devices applications
RC Sharma, R Nandal, N Tanwar… - Journal of Physics …, 2023 - iopscience.iop.org
The advancement in technology in semiconductor materials significantly contributed in
improvement of human life by bringing breakthrough in fabrication of optoelectronics and …
improvement of human life by bringing breakthrough in fabrication of optoelectronics and …
101-GHz InAlN/GaN HEMTs on silicon with high Johnson's figure-of-merit
CW Tsou, CY Lin, YW Lian… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In this brief, the InAlN/GaN high-electron mobility transistors (HEMTs) on silicon substrate
with high Johnson's figure-of-merit (J-FOM) are presented. A trilayer photoresist of …
with high Johnson's figure-of-merit (J-FOM) are presented. A trilayer photoresist of …
Introduction to gallium nitride properties and applications
F Roccaforte, M Leszczynski - … Technology: Power Electronics …, 2020 - Wiley Online Library
This chapter is a general introduction to the properties and applications of gallium nitride
(GaN) and related materials. In the first part, after an historical background on the relevant …
(GaN) and related materials. In the first part, after an historical background on the relevant …
InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments
A micro-scale pressure sensor leveraging a ring-shaped In 0.17 Al 0.83 N/GaN high electron
mobility transistor (HEMT) sensing element was fabricated and characterized under applied …
mobility transistor (HEMT) sensing element was fabricated and characterized under applied …