Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

A brief review on beta gallium oxide (β‐Ga2O3) nanowires (NWs) and nanostructures (NS)
is presented in this article. β‐Ga2O3 is a wide‐bandgap (Eg∼ 4.9 eV) semiconductor and …

Abstract Trivalent lanthanide (Ln 3+) ions doped semiconductor nanomaterials have
recently attracted considerable attention owing to their distinct optical properties and their …

We present temperature-dependent refractive index along crystallographic b [010] and a
direction perpendicular to (100)-plane for monoclinic phase (β) Ga_2O_3 single crystal …

The position of activator ions in the lattice has a fundamental effect on the luminescent
properties of phosphors. In this paper, we describe the normal and defect sites of Eu3+ ions …

Eu doped Ga 2 O 3 film has been grown on n-Si (111) substrate by pulsed laser deposition.
Excellent structural and optical properties of the obtained Ga 2 O 3: Eu film have been …

The influence of indium do** on morphology, structural, and luminescence properties of
gallium oxide micro-and nanostructures is reported. Indium-doped gallium oxide micro-and …

Elongated micro-and nanostructures of Sn doped or Sn and Cr codoped monoclinic gallium
oxide have been grown by a thermal method. The presence of Sn during growth has been …

Zn-deficient spinel-type ZnGa2O4: Mn2+ phosphor thin films were prepared using pulsed
laser deposition. With an increase (decrease) in the Zn deficiency (concentration) of the …