The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …

Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Semiconductors are the basis of many vital technologies such as electronics, computing,
communications, optoelectronics, and sensing. Modern semiconductor technology can trace …

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …

Atomic defects, being the most prevalent zero-dimensional topological defects, are
ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …

Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …