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Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches
Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …
bipolar transistor-based power converters are still widely used in industrial applications in …
Review of the failure mechanism and methodologies of IGBT bonding wire
Q Li, YB Li, HD Fu, CM Tu, B ** fault …
A composite failure precursor for condition monitoring and remaining useful life prediction of discrete power devices
In order to prevent catastrophic failures in power electronic systems, multiple failure
precursors have been identified to characterize the degradation of power devices. However …
precursors have been identified to characterize the degradation of power devices. However …
A novel bond wire fault detection method for IGBT modules based on turn-on gate voltage overshoot
Y Yang, P Zhang - IEEE Transactions on Power Electronics, 2020 - ieeexplore.ieee.org
Bond wire degradation is one of the most common failure modes for wire-welded packaging
insulated-gate bipolar transistor (IGBT) modules. This article proposes a novel bond wire …
insulated-gate bipolar transistor (IGBT) modules. This article proposes a novel bond wire …
Gate–emitter pre-threshold voltage as a health-sensitive parameter for IGBT chip failure monitoring in high-voltage multichip IGBT power modules
R Mandeya, C Chen, V Pickert… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper proposes a novel health-sensitive parameter, called the gate-emitter pre-
threshold voltage VGE (pre-th), for detecting IGBT chip failures in multichip IGBT power …
threshold voltage VGE (pre-th), for detecting IGBT chip failures in multichip IGBT power …