Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization
Phase-change random access memory (PCRAM) has attracted much attention for next-
generation nonvolatile memory that can replace flash memory and can be used for storage …
generation nonvolatile memory that can replace flash memory and can be used for storage …
Selective transportation of molybdenum from model and ore through poly inclusion membrane
The extraction of molybdenum from the aqueous solution through poly inclusion membrane
(PIM) containing tri-caprylylmethylammonium chloride (Aliquat-336) as a carrier has been …
(PIM) containing tri-caprylylmethylammonium chloride (Aliquat-336) as a carrier has been …
Electrical transport mechanism of the amorphous phase in Cr2Ge2Te6 phase change material
Abstract A Cr 2 Ge 2 Te 6 (CrGT) phase change material (PCM) was studied. Different from
conventional PCMs, it shows an inverse resistance change between a low-resistance …
conventional PCMs, it shows an inverse resistance change between a low-resistance …
Molybdenum oxide-base phase change resistive switching material
Y Ogawa, S Shindo, Y Sutou, J Koike - Applied Physics Letters, 2017 - pubs.aip.org
We investigated the temperature dependence of electrical resistance of a reactively
sputtered Mo-oxide film with a composition near MoO 3 and found that the sputtered Mo …
sputtered Mo-oxide film with a composition near MoO 3 and found that the sputtered Mo …