Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization

S Hatayama, Y Sutou, S Shindo, Y Saito… - … applied materials & …, 2018 - ACS Publications
Phase-change random access memory (PCRAM) has attracted much attention for next-
generation nonvolatile memory that can replace flash memory and can be used for storage …

Selective transportation of molybdenum from model and ore through poly inclusion membrane

N Ali, N Naz, Z Shah, A Khan, R Nawaz - Bulletin of the Chemical Society …, 2020 - ajol.info
The extraction of molybdenum from the aqueous solution through poly inclusion membrane
(PIM) containing tri-caprylylmethylammonium chloride (Aliquat-336) as a carrier has been …

Electrical transport mechanism of the amorphous phase in Cr2Ge2Te6 phase change material

S Hatayama, Y Sutou, D Ando, J Koike… - Journal of Physics D …, 2019 - iopscience.iop.org
Abstract A Cr 2 Ge 2 Te 6 (CrGT) phase change material (PCM) was studied. Different from
conventional PCMs, it shows an inverse resistance change between a low-resistance …

Molybdenum oxide-base phase change resistive switching material

Y Ogawa, S Shindo, Y Sutou, J Koike - Applied Physics Letters, 2017 - pubs.aip.org
We investigated the temperature dependence of electrical resistance of a reactively
sputtered Mo-oxide film with a composition near MoO 3 and found that the sputtered Mo …