Transparent perovskite barium stannate with high electron mobility and thermal stability

WJ Lee, HJ Kim, J Kang, DH Jang… - Annual Review of …, 2017 - annualreviews.org
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have
become necessary materials for a variety of applications in the information and energy …

[HTML][HTML] Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

H Paik, Z Chen, E Lochocki, A Seidner H, A Verma… - Apl Materials, 2017 - pubs.aip.org
Epitaxial La-doped BaSnO 3 films were grown in an adsorption-controlled regime by
molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface. A …

A tutorial review on solid oxide fuel cells: fundamentals, materials, and applications

D Sikstrom, V Thangadurai - Ionics, 2024 - Springer
Solid oxide fuel cells (SOFCs) are recognized as a clean energy source that, unlike internal
combustion engines, produces no CO2 during operation when H2 is used as a fuel. They …

[HTML][HTML] All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

U Kim, C Park, T Ha, YM Kim, N Kim, C Ju, J Park, J Yu… - APL materials, 2015 - pubs.aip.org
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of
two lattice-matched perovskite oxides: BaSnO 3 and LaInO 3. We have developed epitaxial …

[HTML][HTML] BaSnO3 as a channel material in perovskite oxide heterostructures

K Krishnaswamy, L Bjaalie, B Himmetoglu… - Applied Physics …, 2016 - pubs.aip.org
BaSnO 3 (BSO) is a transparent perovskite oxide with high room-temperature mobility, a
property that is highly desirable for a channel material in transistors. However, its low density …

High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide

C Park, U Kim, CJ Ju, JS Park, YM Kim… - Applied Physics …, 2014 - pubs.aip.org
We fabricated an n-type accumulation-mode field effect transistor based on BaSnO 3
transparent perovskite semiconductor, taking advantage of its high mobility and oxygen …

High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate

J Shin, YM Kim, Y Kim, C Park, K Char - Applied Physics Letters, 2016 - pubs.aip.org
(Ba, La) SnO 3 is a wide bandgap semiconducting perovskite oxide with high electron
mobility and excellent oxygen stability. The carrier modulation of (Ba, La) SnO 3 channel by …

[HTML][HTML] Stability of the oxygen vacancy induced conductivity in BaSnO3 thin films on SrTiO3

HM Jaim, S Lee, X Zhang, I Takeuchi - Applied Physics Letters, 2017 - pubs.aip.org
BaSnO 3 (BSO) has emerged as a major candidate for exploration of a variety of functional
device applications. In this letter, we report on the role of the oxygen vacancy concentration …

[HTML][HTML] Structure and transport in high pressure oxygen sputter-deposited BaSnO3− δ

K Ganguly, P Ambwani, P Xu, JS Jeong, KA Mkhoyan… - APL materials, 2015 - pubs.aip.org
BaSnO 3 has recently been identified as a high mobility wide gap semiconductor with
significant potential for room temperature oxide electronics. Here, a detailed study of the …

Low Leakage in High‐k Perovskite Gate Oxide SrHfO3

J Kim, D Song, H Yun, J Lee, JH Kim… - Advanced Electronic …, 2023 - Wiley Online Library
Reducing the leakage current through the gate oxide is becoming increasingly important for
power consumption reduction as well as reliability in integrated circuits as the …