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Transparent perovskite barium stannate with high electron mobility and thermal stability
WJ Lee, HJ Kim, J Kang, DH Jang… - Annual Review of …, 2017 - annualreviews.org
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have
become necessary materials for a variety of applications in the information and energy …
become necessary materials for a variety of applications in the information and energy …
[HTML][HTML] Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Epitaxial La-doped BaSnO 3 films were grown in an adsorption-controlled regime by
molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface. A …
molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface. A …
A tutorial review on solid oxide fuel cells: fundamentals, materials, and applications
Solid oxide fuel cells (SOFCs) are recognized as a clean energy source that, unlike internal
combustion engines, produces no CO2 during operation when H2 is used as a fuel. They …
combustion engines, produces no CO2 during operation when H2 is used as a fuel. They …
[HTML][HTML] All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of
two lattice-matched perovskite oxides: BaSnO 3 and LaInO 3. We have developed epitaxial …
two lattice-matched perovskite oxides: BaSnO 3 and LaInO 3. We have developed epitaxial …
[HTML][HTML] BaSnO3 as a channel material in perovskite oxide heterostructures
BaSnO 3 (BSO) is a transparent perovskite oxide with high room-temperature mobility, a
property that is highly desirable for a channel material in transistors. However, its low density …
property that is highly desirable for a channel material in transistors. However, its low density …
High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide
We fabricated an n-type accumulation-mode field effect transistor based on BaSnO 3
transparent perovskite semiconductor, taking advantage of its high mobility and oxygen …
transparent perovskite semiconductor, taking advantage of its high mobility and oxygen …
High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate
(Ba, La) SnO 3 is a wide bandgap semiconducting perovskite oxide with high electron
mobility and excellent oxygen stability. The carrier modulation of (Ba, La) SnO 3 channel by …
mobility and excellent oxygen stability. The carrier modulation of (Ba, La) SnO 3 channel by …
[HTML][HTML] Stability of the oxygen vacancy induced conductivity in BaSnO3 thin films on SrTiO3
BaSnO 3 (BSO) has emerged as a major candidate for exploration of a variety of functional
device applications. In this letter, we report on the role of the oxygen vacancy concentration …
device applications. In this letter, we report on the role of the oxygen vacancy concentration …
[HTML][HTML] Structure and transport in high pressure oxygen sputter-deposited BaSnO3− δ
BaSnO 3 has recently been identified as a high mobility wide gap semiconductor with
significant potential for room temperature oxide electronics. Here, a detailed study of the …
significant potential for room temperature oxide electronics. Here, a detailed study of the …
Low Leakage in High‐k Perovskite Gate Oxide SrHfO3
Reducing the leakage current through the gate oxide is becoming increasingly important for
power consumption reduction as well as reliability in integrated circuits as the …
power consumption reduction as well as reliability in integrated circuits as the …