After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT)
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …

A comprehensive evaluation of sensitivity between double gate tunnel FET and n+ pocket
doped vertical tunnel FET based label-free biosensors is reported in this work. Both the …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

This article examines the performance of N+ pocket-doped vertical tunnel field-effect
transistor (VTFET)-based label-free biosensors with the help of an analytical model …

In this review, we explored the modern development of schottky field effect transistor (SK
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …

In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average
subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked …

Van der Waals heterostructures composed of two-dimensional (2D) transition metal
dichalcogenides (TMD) materials have stimulated tremendous research interest in various …

We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-
doped silicon and n-type MoS2. The resulting p–n heterojunction shows a staggered band …

In this work, a device called pocket doped junctionless tunnel field‐effect transistor (JL‐
TFET) for digital inverter application is proposed. The operation of this device is subjected to …