This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …

With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …

Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

Memristor-based computation provides a promising solution to boost the power efficiency of
the neuromorphic computing system. However, a behavior-level memristor-based …

The Resistive Random Access Memory (RRAM) is a new type of non-volatile memory based
on the resistive memory device. Researchers are currently moving from resistive device …

The memory performances of the HfO X based bipolar resistive memory, including switching
speed and memory reliability, are greatly improved in this work. Record high switching …

Resistive random access memories (Re-RAMs) have transpired as a foremost candidate
among emerging nonvolatile memory technologies with a potential to bridge the gap …

Providing for three-dimensional memory cells having enhanced electric field characteristics
and/or memory cells located at broken interconnects is described herein. By way of …

In this article, resistive switching based on the thermochemical mechanism (TCM) is
reviewed. This mechanism is observed when thermochemical redox processes dominate …

In this paper, we show the coexistence of the bipolar and unipolar resistive-switching modes
in NiO cells realized using an optimized oxidation process of a Ni blanket layer used as the …