First-principles determination of defect energy levels through hybrid density functionals and GW
In this topical review, we discuss recent progress in electronic-structure methods for
calculating defect energy levels in semiconductors and insulators. We concentrate mainly on …
calculating defect energy levels in semiconductors and insulators. We concentrate mainly on …
Native defects in gallium arsenide
JC Bourgoin, HJ Von Bardeleben… - Journal of applied …, 1988 - pubs.aip.org
We describe information which has been obtained on point defects detected in various types
of GaAs materials using electron paramagnetic resonance as well as electrical and optical …
of GaAs materials using electron paramagnetic resonance as well as electrical and optical …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
Total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2/Al
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
Assessing the accuracy of hybrid functionals in the determination of defect levels: Application to the As antisite in GaAs
The accuracy of nonscreened and screened hybrid functionals for the calculation of defect
levels within the band gap is assessed for the As antisite in GaAs, the nature of which is well …
levels within the band gap is assessed for the As antisite in GaAs, the nature of which is well …
Accuracy of for calculating defect energy levels in solids
The accuracy of GW in the determination of defect energy levels is assessed through
calculations on a set of well-characterized point defects in semiconductors: the As antisite in …
calculations on a set of well-characterized point defects in semiconductors: the As antisite in …
Simple intrinsic defects in gallium arsenide
We investigate the structural properties and energy levels of simple intrinsic defects in
gallium arsenide. The first-principles calculations (1) apply boundary conditions appropriate …
gallium arsenide. The first-principles calculations (1) apply boundary conditions appropriate …
Stoichiometry of III–V compounds
J Nishizawa, Y Oyama - Materials Science and Engineering: R: Reports, 1994 - Elsevier
Abstract Effects of stoichiometry control on electrical, optical and crystallographic features in
III–V compounds are shown. The application of the optimum vapor pressure during …
III–V compounds are shown. The application of the optimum vapor pressure during …
Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
The formation energies and charge transition levels of vacancy and antisite defects in GaAs
and In 0.5 Ga 0.5 As are calculated through hybrid density functionals. In As-rich conditions …
and In 0.5 Ga 0.5 As are calculated through hybrid density functionals. In As-rich conditions …
Passivation of interfacial defects at III-V oxide interfaces
L Lin, J Robertson - Journal of Vacuum Science & Technology B, 2012 - pubs.aip.org
The electronic structure of gap states has been calculated in order to assign the interface
states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As …
states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As …
Understanding and reducing deleterious defects in the metastable alloy GaAsBi
Technological applications of novel metastable materials are frequently inhibited by
abundant defects residing in these materials. Using first-principles methods, we investigate …
abundant defects residing in these materials. Using first-principles methods, we investigate …