2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

S Kanungo, G Ahmad, P Sahatiya… - npj 2D Materials and …, 2022 - nature.com
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …

A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity

NN Reddy, DK Panda - Silicon, 2021 - Springer
In this fast-growing technological world biosensors become more substantial in human life
and the extensive use of biosensors creates enormous research interest among researchers …

Performance assessment of a novel vertical dielectrically modulated TFET-based biosensor

M Verma, S Tirkey, S Yadav, D Sharma… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
A vertical dielectrically modulated tunnel field-effect transistor (V-DMTFET) as a label-free
biosensor has been investigated in this paper for the first time and compared with lateral …

[BOK][B] Fundamentals of tunnel field-effect transistors

S Saurabh, MJ Kumar - 2016 - taylorfrancis.com
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Performance assessment of new dual-pocket vertical heterostructure tunnel FET-based biosensor considering steric hindrance issue

A Bhattacharyya, M Chanda… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
In this paper, a new dual-pocket (DP), dielectric modulated (DM) heterostructured tunnel
field-effect transistor (DM-HTFET)-based biosensor has been reported. First, the efficacy of …

Fabrication and Analysis of a Heterojunction Line Tunnel FET

AM Walke, A Vandooren, R Rooyackers… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge 0.45
heterojunction line tunnel field effect transistor (TFET). The device shows an increase in …

Optimization of gate-on-source-only tunnel FETs with counter-doped pockets

KH Kao, AS Verhulst… - … on Electron Devices, 2012 - ieeexplore.ieee.org
We investigate a promising tunnel FET configuration having a gate on the source only,
which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current …

Physics based analysis of a high-performance dual line tunneling TFET with reduced corner effects

T Ashok, CK Pandey - Physica Scripta, 2024 - iopscience.iop.org
To improve the DC and analog/HF performance, a novel dual line tunneling based TFET
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …

High-speed and low-power ultradeep-submicrometer III-V heterojunctionless tunnel field-effect transistor

PK Asthana, B Ghosh, Y Goswami… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Tunnel field-effect transistor (TFET) devices are gaining attention because of good
scalability and they have very low leakage current. However, they suffer from low ON-current …

A dielectrically modulated vertical TFET-based biosensor considering irregular probe placement and steric hindrance issues

D Das, CK Pandey - Micro and Nanostructures, 2024 - Elsevier
This manuscript presents a comparative biosensing analysis of a dielectrically modulated
dual-drain vertical TFET (DD-VTFET) by considering three distinct device arrangements …