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Nanofluidic devices towards single DNA molecule sequence map**
Nanofluidics enables the imaging of stretched single molecules with potential applications
for single molecule sequence map**. Lab‐on‐a‐chip devices for single cell trap** and …
for single molecule sequence map**. Lab‐on‐a‐chip devices for single cell trap** and …
Enhanced lithographic imaging layer meets semiconductor manufacturing specification a decade early
Lithography followed by plasma etching is the standard method for manufacturing
microelectronics. Requirements on lateral resolution and vertical dimensions translate into …
microelectronics. Requirements on lateral resolution and vertical dimensions translate into …
Oxidation of suspended graphene: etch dynamics and stability beyond 1000 C
We study the oxidation of clean suspended mono-and few-layer graphene in real time by in
situ environmental transmission electron microscopy. At an oxygen pressure below 0.1 …
situ environmental transmission electron microscopy. At an oxygen pressure below 0.1 …
[HTML][HTML] Optimization of an electron beam lithography instrument for fast, large area writing at 10 kV acceleration voltage
Electron beam lithography (EBL) is a maskless lithography technique used in numerous
applications for fabrication of ultrahigh-resolution photolithography masks. The main …
applications for fabrication of ultrahigh-resolution photolithography masks. The main …
CMOS without do**: Multi-gate silicon-nanowire field-effect-transistors
F Wessely, T Krauss, U Schwalke - Solid-state electronics, 2012 - Elsevier
In this paper, we report on the fabrication and characterization of voltage configurable
nanowire field-effect-transistor (NWFET) devices suitable to broaden the flexibility in circuit …
nanowire field-effect-transistor (NWFET) devices suitable to broaden the flexibility in circuit …
Density doubling of block copolymer templated features
Block copolymers can be used to template large arrays of nanopatterns with periodicities
equal to the characteristic spacing of the polymer. Here we demonstrate a technique …
equal to the characteristic spacing of the polymer. Here we demonstrate a technique …
5 kV multielectron beam lithography: MAPPER tool and resist process characterization
A multielectron beam tool from MAPPER lithography was installed in LETI premises in July
2009. It is based on low voltage lithography. In order to prepare acceptance tests, a …
2009. It is based on low voltage lithography. In order to prepare acceptance tests, a …
[HTML][HTML] Sub-30 keV patterning of HafSOx resist: effects of voltage on resolution, contrast, and sensitivity
KC Fairley, MC Sharps, G Mitchson, J Ditto… - Journal of Vacuum …, 2016 - pubs.aip.org
Reducing the accelerating voltage used to pattern a high-resolution inorganic thin film
electron beam resist, HafSOx dramatically decreases the dose required to pattern sub-10 …
electron beam resist, HafSOx dramatically decreases the dose required to pattern sub-10 …
Stochastic simulation of pattern formation for chemically amplified resist in electron beam lithography
M Koyama, M Shirai, H Kawata, Y Hirai… - Japanese Journal of …, 2019 - iopscience.iop.org
A molecular scale simulation of the pattern formation process for chemically amplified resist
in electron beam lithography based on the stochastic approach is proposed. The initial resist …
in electron beam lithography based on the stochastic approach is proposed. The initial resist …
Patterning with EUVL: the road to 22nm node
HW Kim, HS Na, KY Cho, CM Park… - Extreme Ultraviolet …, 2010 - spiedigitallibrary.org
EUV resists have been developed to be able to print sub-30nm L/S features with EUV ADT
having 0.25 NA. However, a lithographic performance especially line width roughness …
having 0.25 NA. However, a lithographic performance especially line width roughness …