Thermal conductivity of copper-graphene composite films synthesized by electrochemical deposition with exfoliated graphene platelets

K Jagannadham - Metallurgical and Materials Transactions B, 2012 - Springer
Samples of graphene composites with matrix of copper were prepared by electrochemical
codeposition from CuSO 4 solution with graphene oxide suspension. The thermal …

GeSnOI mid-infrared laser technology

B Wang, E Sakat, E Herth, M Gromovyi… - Light: Science & …, 2021 - nature.com
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers
manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap …

Directly diode-pumped, Kerr-lens mode-locked, few-cycle Cr: ZnSe oscillator

N Nagl, S Gröbmeyer, V Pervak, F Krausz, O Pronin… - Optics …, 2019 - opg.optica.org
Lasers based on Cr^ 2+-doped II-VI material, often known as the Ti: Sapphire of the mid-
infrared, can directly provide few-cycle pulses with octave-spanning spectra, and serve as …

Long-term performance analysis of a large-scale photoVoltaic plant in extreme desert conditions

M Chaib, A Benatiallah, A Dahbi, N Hachemi, F Baira… - Renewable Energy, 2024 - Elsevier
This study comprehensively evaluates the performance and operational challenges of a 9
MW grid-connected photovoltaic (PV) system in Timmimoun, southern Algeria, after eight …

On the reliability of pulse power saturation models for broad-area GaAs-based lasers

J Piprek - Optical and Quantum Electronics, 2019 - Springer
With short current pulses, GaAs-based lasers can achieve high output powers if self-heating
and catastrophic optical damage are suppressed. However, the pulse power is still severely …

Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser

MN Sysak, H Park, AW Fang, JE Bowers, R Jones… - Optics …, 2007 - opg.optica.org
In this work we present both experimental and theoretical thermal analysis of an electrically
pumped hybrid silicon evanescent laser. Measurements of an 850 μm long Fabry-Perot …

What causes the pulse power saturation of GaAs-based broad-area lasers?

J Piprek, ZM Li - IEEE Photonics Technology Letters, 2018 - ieeexplore.ieee.org
With short current pulses, the output power of semiconductor lasers is limited by non-thermal
internal loss mechanisms. Two-photon absorption (TPA) was recently proposed as …

Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

M Kantner - Journal of Computational Physics, 2020 - Elsevier
Many challenges faced in today's semiconductor devices are related to self-heating
phenomena. The optimization of device designs can be assisted by numerical simulations …

Electrical scanning probe microscopy: Investigating the inner workings of electronic and optoelectronic devices

SB Kuntze, D Ban, EH Sargent… - Critical Reviews in …, 2005 - Taylor & Francis
Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators,
and detectors are critical to the contemporary computing and communications infrastructure …

Measurements of internal optical loss inside an operating laser diode

DA Veselov, YK Bobretsova, AY Leshko… - Journal of Applied …, 2019 - pubs.aip.org
An experimental technique for measuring internal optical loss in high-power edge-emitting
semiconductor lasers is demonstrated. The technique is based on coupling a probe beam …