In order to better predict the high-frequency switching operation of transistors in power
converters, parasitic elements of these devices such as resistances, inductances, and …

An underlapped dual-gate (U-DG) quaternary In 0.05 Al 0.75 Ga 0.2 N/GaN metal–oxide–
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …

Physics-based models for calculating the threshold voltage (V th) of GaN-based high
electron mobility transistor (HEMT) is proposed. Assuming that the 2-D electron gas in III-V …

The ever increasing demand for higher power devices at higher frequencies has prompted
much research recently into the aluminium nitride/gallium nitride high electron mobility …

Gallium Nitride (GaN) power devices that have been developed these recent years are ideal
candidates for high frequency power conversion, leading to a reduction of size and weight of …

A high-resistance Si-based AlInGaN/GaN heterojunction epitaxy specifying AlN/AlGaN
laminated buffer layers and AlInGaN barrier layer with 45% Al composition was successfully …

The AlInGaN/GaN heterojunction epitaxy material with high cutoff frequency and saturated
power density has become a very popular candidate for millimeter wave applications in next …

A double channel AlGaN/GaN HEMT is developed at 0.6 μm gate length. In the double
channel HEMT, there is formation of two carrier channel due to polarisation. In this paper …

In this paper, Performances are analyzed of an AlGaN/GaN-based High Electron Mobility
Transistor for different device structures. As the 2DEG well forms in the interface of two …

A report is presented on high transconductance Gm measured on AlGaN/GaN HEMTs with a
12.5 nm-thick AlGaN barrier layer, grown on high resistivity silicon substrate using the …