Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
Recent progress on quantum dot solar cells: a review
T Sogabe, Q Shen… - Journal of Photonics for …, 2016 - spiedigitallibrary.org
Semiconductor quantum dots (QDs) have a potential to increase the power conversion
efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent …
efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent …
Review of experimental results related to the operation of intermediate band solar cells
The intermediate band solar cell (IBSC) has drawn the attention of the scientific community
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …
Suppressing the effect of the wetting layer through AlAs cap** in InAs/GaAs QD structures for solar cells applications
Recently, thin AlAs cap** layers (CLs) on InAs quantum dot solar cells (QDSCs) have
been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although …
been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although …
[HTML][HTML] Effect of the AlAs cap** layer thickness on the structure of InAs/GaAs QD
Recently, very thin AlAs cap** layers (CLs) have been proposed as a useful tool to
increase the performance of InAs/GaAs quantum dot (QDs) devices. However, the structure …
increase the performance of InAs/GaAs quantum dot (QDs) devices. However, the structure …
InAs/GaAs quantum dot solar cell with an AlAs cap layer
We report the effects of the deposition of an AlAs cap layer (CL) over InAs quantum dots
(QDs) on the performance of QD solar cells (QDSCs). The growth of AlAs CL over InAs QDs …
(QDs) on the performance of QD solar cells (QDSCs). The growth of AlAs CL over InAs QDs …
[HTML][HTML] Voltage recovery in charged InAs/GaAs quantum dot solar cells
The realization of high efficiency quantum dot intermediate band solar cells is challenging
due to the thermally activated charge esca** at high temperatures. The enhancement in …
due to the thermally activated charge esca** at high temperatures. The enhancement in …
[HTML][HTML] Submonolayer InGaAs/GaAs quantum dot solar cells
Optical and structural properties of submonolayer InGaAs/GaAs quantum dot solar cells
(SML-QDSCs) are investigated and compared with quantum well solar cells (QWSCs) …
(SML-QDSCs) are investigated and compared with quantum well solar cells (QWSCs) …
Limiting efficiencies for intermediate band solar cells with partial absorptivity: the case for a quantum ratchet
The intermediate band solar cell (IBSC) concept aims to improve upon the Shockley–
Queisser limit for single bandgap solar cells by also making use of below bandgap photons …
Queisser limit for single bandgap solar cells by also making use of below bandgap photons …
Performance optimization of In (Ga) As quantum dot intermediate band solar cells
G Yang, W Liu, Y Bao, X Chen, C Ji, B Wei, F Yang… - Discover Nano, 2023 - Springer
Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can
absorb photons with energy lower than the bandgap of the semiconductor through the half …
absorb photons with energy lower than the bandgap of the semiconductor through the half …