The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode …
With the technological scaling of metal–oxide–semiconductor field-effect transistors
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs
Gate-all-around stacked nano-sheet (GAA-SNS) p-channel field effect transistors (FETs)
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
Transient self-heating effects on mixed-mode hot carrier and bias temperature instability in FinFETs: Experiments and modeling
The self-heating effect (SHE) is a critical issue in nanoscale fin field effect transistors
(FinFETs) that has emerged as an essential concern for device reliability. In physical circuit …
(FinFETs) that has emerged as an essential concern for device reliability. In physical circuit …
Investigation of the impact of hot-carrier-induced interface state generation on carrier mobility in nMOSFET
A comprehensive investigation on the hot-carrier-induced interface state generation and its
impact on carrier mobility in nMOSFET is performed. IV compact modeling and charge …
impact on carrier mobility in nMOSFET is performed. IV compact modeling and charge …
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations
We report TCAD simulation studies on nanowire (NW), nanosheet (NS) and forksheet (FS)
FET hot-carrier relia-bility. The simulations entail i) solving the Boltzmann transport equation …
FET hot-carrier relia-bility. The simulations entail i) solving the Boltzmann transport equation …
DC to AC Analysis of HC vs. BTI damage in N-EDMOS used in Single Photon Avalanche Diode cell
H Pitard, A Bravaix, X Federspiel, R Fillon… - Microelectronics …, 2023 - Elsevier
Abstract N-channel Extended Drain Metal Oxide Semiconductor (EDMOS) device is
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
Novel low thermal budget CMOS RMG: Performance and reliability benchmark against conventional high thermal budget gate stack solutions
Low thermal budget gate stack fabrication is a key enabler for upcoming CMOS technology
innovations, such as sequential-3-D integration and CFETs. In this article, we discuss the …
innovations, such as sequential-3-D integration and CFETs. In this article, we discuss the …
Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications
T Garba-Seybou, A Bravaix, X Federspiel… - Microelectronics …, 2021 - Elsevier
Improving device aging models requires to consider hot-carrier degradation (HCD) between
On/Off modes and interaction of these different damage rate mechanisms as well as the …
On/Off modes and interaction of these different damage rate mechanisms as well as the …
Trap** of hot carriers in the forksheet FET wall: a TCAD study
We simulate the spatial profile of trapped charge in the forksheet FET wall under hot-carrier
stress by calculating carrier distribution functions and using a non-radiative multiphonon …
stress by calculating carrier distribution functions and using a non-radiative multiphonon …