[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Adaptive oxide electronics: A review
SD Ha, S Ramanathan - Journal of applied physics, 2011 - pubs.aip.org
Novel information processing techniques are being actively explored to overcome
fundamental limitations associated with CMOS scaling. A new paradigm of adaptive …
fundamental limitations associated with CMOS scaling. A new paradigm of adaptive …
Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
Controllable multilevel resistive switching (RS) and neuromorphic characteristics emerges
as a promising paradigm to build power-efficient computing hardware for high density data …
as a promising paradigm to build power-efficient computing hardware for high density data …
[HTML][HTML] Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
This review presents a summary of current understanding of the resistive switching materials
and devices which have inspired extraordinary interest all over the world. Although various …
and devices which have inspired extraordinary interest all over the world. Although various …
Physical mechanism and performance factors of metal oxide based resistive switching memory: a review
C Ye, J Wu, G He, J Zhang, T Deng, P He… - Journal of Materials …, 2016 - Elsevier
This review summarizes the mechanism and performance of metal oxide based resistive
switching memory. The origin of resistive switching (RS) behavior can be roughly classified …
switching memory. The origin of resistive switching (RS) behavior can be roughly classified …
Memory and threshold resistance switching in Ni/NiO core–shell nanowires
We report on the first controlled alternation between memory and threshold resistance
switching (RS) in single Ni/NiO core–shell nanowires by setting the compliance current (I …
switching (RS) in single Ni/NiO core–shell nanowires by setting the compliance current (I …
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
MC Wu, WY Jang, CH Lin… - … Science and Technology, 2012 - iopscience.iop.org
Low-power, bipolar resistive switching (RS) characteristics in the Ti/ZrO 2/Pt nonvolatile
memory with one transistor and one resistor (1T1R) architecture were reported. Multilevel …
memory with one transistor and one resistor (1T1R) architecture were reported. Multilevel …
Efficient tristable resistive memory based on single layer graphene/insulating polymer multi-stacking layer
C Wu, F Li, T Guo - Applied Physics Letters, 2014 - pubs.aip.org
Tristable resistive memories based on single layer graphene (SLG)/insulating polymer multi-
stacking layer were fabricated. By using the traditional transfer method, the chemical vapor …
stacking layer were fabricated. By using the traditional transfer method, the chemical vapor …
Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films
Ionics has been traditionally used for long-standing energy applications, 1, 2 ie, ion batteries
which rely on the ionic motion of either Li or Na; 3–10 solid oxide fuel cells based on the …
which rely on the ionic motion of either Li or Na; 3–10 solid oxide fuel cells based on the …