Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
A study was conducted on how the cooling rate after the phase change heat treatment
required to secure the ferroelectric (FE) properties affects the ferroelectricity of Al-doped HfO …
required to secure the ferroelectric (FE) properties affects the ferroelectricity of Al-doped HfO …
A Flexible Hf0.5Zr0.5O2 Nonvolatile Memory with High Polarization Based on Mica Substrate
X Liu, C Wei, F Zhang, Y Peng, T Sun… - ACS Applied …, 2024 - ACS Publications
The rapid development of flexible electronics industrialization has imposed more
demanding requirements on flexible wearable devices. However, traditional memory …
demanding requirements on flexible wearable devices. However, traditional memory …