In this paper, we present a collection of results focussing on the transport properties of
doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and …

Abstract The original Bose–Einstein condensation (BEC) was theoretically established in the
1920s, for the case of an ideal gas of boson particles (a consequence of the symmetry of the …

This communication presents a comparative study on the charge transport (in transient and
steady state) in bulk n-type doped SiC-polytypes: 3 C-SiC, 4 H-SiC and 6 H-SiC. The time …

An analysis of the influence of geometry and size on the thermal conductivity in
semiconductors, particularized to the study in Si and GaN, is presented. This is done in the …

Neste artigo consideramos os aspectos gerais dos temas emergentes na segunda metade
do século passado, de complexidade, auto-organização e informação. Os três estão ligados …

A generalized Hydrodynamics, referred to as Mesoscopic Hydro-Thermodynamics, of
phonons in semiconductors is presented. It involves the descriptions of the motion of the …

In the context of a nonequilibrium statistical thermodynamics—based on a nonequilibrium
statistical ensemble formalism—a generalized hydrodynamics of fluids under driven flow …

The hydrodynamics of carriers (charge and heat motion) and phonons (heat motion) in
semiconductors is analyzed in the presence of constant electric fields. This is done in terms …

In this paper we present a study on the charge transport in bulk n-type doped semiconductor
3C-SiC (in both, transient and steady state) using a non-equilibrium quantum kinetic theory …

Aluminum nitride is attracting great interest of the industry and scientific community due to its
interesting properties. In this paper is performed a theoretical study on the ultrafast transient …