Research in the field of electronics of 1D group-IV semiconductor structures has attracted
increasing attention over the past 15 years. The exceptional combination of the unique 1D …

A comprehensive scalable trap-charge model for the dc and pulsed IV modeling of GaN high
electron-mobility transistor is presented. While interface traps are considered for dc IV …

DC/AC performance and the variations due to single interface trap of the nanowire (NW)
FETs were investigated in the 7-nm technology node using fully calibrated TCAD simulation …

The aim of this study is to investigate the memory performances of gate-all-around floating
gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable …

A charge pum** (CP) technique with gate-induced drain leakage (GIDL) current is
proposed to extract interface trap density (in GAA MOSFETs. This GIDL CP characterizes the …

Recently, in accordance with the demand for development of low-power semiconductor
devices, a negative capacitance field-effect-transistor (NC-FET) that integrates ferroelectric …

The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon
liquid‐gated nanowire field‐effect transistor devices are investigated in different …

A surface potential-based low-field drain current compact model is presented for two-
dimensional (2D) transition metal dichalcogenide (TMD) semiconductor field-effect …

The number of interface traps (N it) in a gate-all-around (GAA) MOSFET that harnesses an
inherent floating body, was analyzed by using the synchronized optical charge pum** …

The compact modeling of flash memories is crucial for integrated circuit designers to carry
out efficient and precise circuit-level evaluations, particularly in the case of 3D NAND flash …