This review compares the mechanical and thermal-electrical properties of sintered copper
(Cu) with sintered silver (Ag) as bonding materials in the microelectronics joint applications …

Sintered silver joint is a porous silver that bonds a semiconductor die to the substrate as part
of the packaging process. Sintered Ag is one of the few possible bonding methods to fulfill …

A review is provided, which first considers low-temperature diffusion bonding with silver
nanomaterials as filler materials via thermal sintering for microelectronic applications, and …

Requirements for the miniaturization of electronics are constantly increasing as more and
more functions are aimed to be integrated into a single device. At the same time, there are …

Silicon carbide (SiC) devices have shown definite advantages over Si counterparts in high-
temperature, high-voltage, and high-frequency applications. To fully exploit the potentiality of …

The rapid development of the third-generation semiconductors has posed new requirements
and challenges for power electronic packaging. In recent years, the utilization of nano-Ag …

Sn and Sn solder alloys in microelectronics are the most susceptible to suffer from
electrochemical migration (ECM) which significantly compromises the reliability of …

Ag–Cu bimetallic nanoparticles, combining the advantages of both Ag and Cu, are a
promising material for power electronic packaging. In this work, a supersaturated Ag–7.3 …

The power semiconductor joining technology through sintering of copper nanoparticles is
well-suited for die attachment in wide bandgap (WBG) semiconductors, offering high …

With the increase in penetration of power electronic converters in the power systems, a
demand for overcurrent/overloading capability has risen for the fault clearance duration. This …