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The quantum hydrodynamic model for semiconductor devices
CL Gardner - SIAM Journal on Applied Mathematics, 1994 - SIAM
The classical hydrodynamic equations can be extended to include quantum effects by
incorporating the first quantum corrections. These quantum corrections are O(ℏ^2). The full …
incorporating the first quantum corrections. These quantum corrections are O(ℏ^2). The full …
[SÁCH][B] Phonons in nanostructures
MA Stroscio, M Dutta - 2001 - books.google.com
This book focuses on the theory of phonon interactions in nanoscale structures with
particular emphasis on modern electronic and optoelectronic devices. The continuing …
particular emphasis on modern electronic and optoelectronic devices. The continuing …
Landauer theory, inelastic scattering, and electron transport in molecular wires
EG Emberly, G Kirczenow - Physical Review B, 2000 - APS
In this paper, we address the topic of inelastic electron scattering in mesoscopic quantum
transport. For systems where only elastic scattering is present, Landauer theory provides an …
transport. For systems where only elastic scattering is present, Landauer theory provides an …
Current and rate equation for resonant tunneling
JH Davies, S Hershfield, P Hyldgaard, JW Wilkins - Physical Review B, 1993 - APS
We have used nonequilibrium quantum statistical mechanics to derive an exact expression
for the current and a rate equation for a simple model of a resonant tunneling diode …
for the current and a rate equation for a simple model of a resonant tunneling diode …
Confined LO-phonon assisted tunneling in a parabolic quantum well with double barriers
J Gong, XX Liang, SL Ban - Journal of applied physics, 2006 - pubs.aip.org
The spatial dependence of the wave functions for electrons in a parabolic quantum well with
double barriers has been calculated by using a transfer-matrix approach and compared with …
double barriers has been calculated by using a transfer-matrix approach and compared with …
Three-dimensional scattering-assisted tunneling in resonant-tunneling diodes
P Roblin, WR Liou - Physical Review B, 1993 - APS
A quantum model and simulator for resonant tunneling diodes that includes three-
dimensional (3D) scattering-assisted tunneling processes is reported. The 3D phase …
dimensional (3D) scattering-assisted tunneling processes is reported. The 3D phase …
Inelastic tunneling through mesoscopic structures
Our objective is to study resonant tunneling of an electron in the presence of inelastic
scattering by optical phonons. Using a recently developed technique, based on exact …
scattering by optical phonons. Using a recently developed technique, based on exact …
Photon-phonon-assisted tunneling through a single-molecule quantum dot
Based on exactly map** of a many-body electron-phonon interaction problem onto a one-
body problem, we apply the well-established nonequilibrium Green function technique to …
body problem, we apply the well-established nonequilibrium Green function technique to …
Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes
Starting from the Keldysh formalism, general analytical expressions are derived for the
current and the occupation of the well in the presence of inelastic scattering, both at the main …
current and the occupation of the well in the presence of inelastic scattering, both at the main …
Reduction of interface phonon modes using metal‐semiconductor heterostructures
Based on a simplified analysis of perfectly conducting metals, it has been suggested
qualitatively that establishing metal‐semiconductor interfaces at the heterojunctions of polar …
qualitatively that establishing metal‐semiconductor interfaces at the heterojunctions of polar …