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Silicon quantum electronics
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
A single-atom transistor
The ability to control matter at the atomic scale and build devices with atomic precision is
central to nanotechnology. The scanning tunnelling microscope can manipulate individual …
central to nanotechnology. The scanning tunnelling microscope can manipulate individual …
Atomically engineered electron spin lifetimes of 30 s in silicon
Scaling up to large arrays of donor-based spin qubits for quantum computation will require
the ability to perform high-fidelity readout of multiple individual spin qubits. Recent …
the ability to perform high-fidelity readout of multiple individual spin qubits. Recent …
Multi‐Scale Modeling of Tunneling in Nanoscale Atomically Precise Si: P Tunnel Junctions
Controlling electron tunneling is of fundamental importance in the design and operation of
semiconductor nanostructures such as field effect transistors (FETs) and quantum computing …
semiconductor nanostructures such as field effect transistors (FETs) and quantum computing …
Electrostatic landscape of a hydrogen-terminated silicon surface probed by a moveable quantum dot
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to
examine how irregularities in the local environment can affect device functionality. Here, we …
examine how irregularities in the local environment can affect device functionality. Here, we …
Highly tunable exchange in donor qubits in silicon
In this article we have investigated the electrical control of the exchange coupling (J)
between donor-bound electrons in silicon with a detuning gate bias, crucial for the …
between donor-bound electrons in silicon with a detuning gate bias, crucial for the …
Spin-lattice relaxation times of single donors and donor clusters in silicon
An atomistic method of calculating the spin-lattice relaxation times (T 1) is presented for
donors in silicon nanostructures comprising of millions of atoms. The method takes into …
donors in silicon nanostructures comprising of millions of atoms. The method takes into …
An exchange-coupled donor molecule in silicon
We present a combined experimental–theoretical demonstration of the energy spectrum and
exchange coupling of an isolated donor pair in a silicon nanotransistor. The molecular …
exchange coupling of an isolated donor pair in a silicon nanotransistor. The molecular …
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions
Two-electron states bound to donors in silicon are important for both two-qubit gates and
spin readout. We present a full configuration interaction technique in the atomistic tight …
spin readout. We present a full configuration interaction technique in the atomistic tight …
Characterizing Si: P quantum dot qubits with spin resonance techniques
Quantum dots patterned by atomically precise placement of phosphorus donors in single
crystal silicon have long spin lifetimes, advantages in addressability, large exchange …
crystal silicon have long spin lifetimes, advantages in addressability, large exchange …