Terahertz (THz) devices have been the subject of ongoing study as a fundamental
technology for a wide range of industrial applications, including imaging, spectroscopy, and …

We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect
transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs …

The terahertz oscillation due to the plasma instability in the 2-D electron gas is numerically
investigated using an in-house developed device simulator, G-Device. In order to overcome …

We derive at first-order the carrier and velocity conservation equations and a pseudo-2D
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …

A generic matrix model for the responsivity of millimeter-wave (mmW) and sub-THz square
law detectors is proposed. The model is valid for any number of ports and takes the biasing …

Several devices based on 2D materials have become interesting for high-frequency
applications especially sensors, amplifiers and modulators of Terahertz frequencies …

By numerical simulations, we investigate the large-signal photoresponse of InGaAs high
electron mobility transistors submitted to THz radiations. The used pseudo-2D hydrodynamic …

In this paper, we present an analytical approach for the study of the small-signal response of
nanometric field-effect transistor at terahertz frequencies. One-dimensional hydrodynamic …

A study of the small-signal response of a Field-Effect Transistor connected to a purely
reactive load is proposed. In particular, this model, using the equivalent admittances …

In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by
high-frequency optical source is studied. The FETs plasma oscillations dominated in the …