Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing

T Stecconi, R Guido, L Berchialla… - Advanced electronic …, 2022 - Wiley Online Library
The in‐memory computing paradigm aims at overcoming the intrinsic inefficiencies of Von‐
Neumann computers by reducing the data‐transport per arithmetic operation. Crossbar …

Thermodynamic origin of nonvolatility in resistive memory

J Li, A Appachar, SL Peczonczyk, ET Harrison… - Matter, 2024 - cell.com
Electronic switches based on the migration of high-density point defects, or memristors, are
poised to revolutionize post-digital electronics. Despite significant research, key …

Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices

P Stasner, N Kopperberg, K Schnieders… - Nanoscale …, 2024 - pubs.rsc.org
Write-variability and resistance instability are major reliability concerns impeding
implementation of oxide-based memristive devices in neuromorphic systems. The root …

Heterogeneous Integration of Graphene and HfO2 Memristors

U Trstenjak, K Goß, A Gutsche, J Jo… - Advanced Functional …, 2024 - Wiley Online Library
The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for
the heterogeneous integration of various materials for advanced electronics. In this work …

Probing oxidation-driven amorphized surfaces in a Ta (110) film for superconducting qubit

J Mun, PV Sushko, E Brass, C Zhou, K Kisslinger… - ACS …, 2023 - ACS Publications
Recent advances in superconducting qubit technology have led to significant progress in
quantum computing, but the challenge of achieving a long coherence time remains. Despite …

Integration of IGZO-based memristor and Pt-based temperature sensor for enhanced artificial nociceptor system

M Naqi, Y Yu, Y Cho, S Kang, MT Khine, M Lee… - Materials Today Nano, 2024 - Elsevier
A biological nociceptor functions as a sensory neuron receptor that detects external stimuli
and transforms information to the central nervous system, prompting an appropriate …

Large scale integrated IGZO crossbar memristor array based artificial neural architecture for scalable in-memory computing

M Naqi, T Kim, Y Cho, P Pujar, J Park, S Kim - Materials Today Nano, 2024 - Elsevier
Neuromorphic systems based on memristor arrays have not only addressed the von
Neumann bottleneck issue but have also enabled the development of computing …

Electrical conductivity of TaOx as function of composition and temperature

K Bao, J Meng, JD Poplawsky, M Skowronski - Journal of Non-Crystalline …, 2023 - Elsevier
The ability to model the resistive switching devices depends on input material parameters
and is particularly sensitive to values of electrical conductivity of the functional material as a …

Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy

J Meng, JM Goodwill, E Strelcov, K Bao… - ACS Applied …, 2023 - ACS Publications
Understanding the physical changes during electroformation and switching processes in
transition-metal-oxide-based non-volatile memory devices is important for advancing this …

On side-channel analysis of memristive cryptographic circuits

LW Chen, Z Chen, W Schindler, X Zhao… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Memristive technologies offer fascinating opportunities for unconventional computing
architectures and emerging applications. While memristive devices have received …